XP152A11E5MR-G mosfet equivalent, power mosfet.
Low On-State Resistance : Rds(on) = 0.25Ω@ Vgs = -10V
: Rds(on) = 0.45Ω@ Vgs = -4.5V
Ultra High-Speed Switching
Gate Protect Diode Built-in
Driving Voltage
: -4.5V
.
*Notebook PCs
*Cellular and portable phones
*On-board power supplies
*Li-ion battery systems
*FEATU.
The XP152A11E5MR-G is a P-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics. Because high-speed switching is possible, the IC can be efficiently set thereby saving energy. In order to counter static, a g.
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